- INNOVATIVE V-NAND TECHNOLOGY: Powered by Samsung V-NAND Technology, the 970 EVO Plus SSD’s NVMe interface (PCIe Gen 3.0 x4 NVMe 1.3) offers enhanced bandwidth, low latency, and power efficiency ideal for tech enthusiasts, high end gamers, and 4K & 3D content designers
- BREAKTHROUGH READ WRITE SPEEDS: Sequential read and write performance levels of up to 3,500 MB/s and 3,200 MB/s, respectively; Random Read (4KB, QD32): Up to 480,000 IOPS Random Read
- PERFORMANCE OPTIMIZATION AND DATA SECURITY: Seamless cloning and file transfers with Samsung Magician Software, the ideal SSD management solution for performance optimization and data security with automatic firmware updates
- SUPERIOR HEAT DISSIPATION: Samsung’s Nickel-coated controller and Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops
- 300 TBW (Terabytes Written)
SAMSUNG 970 EVO PLUS M.2 2280 500GB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND Internal Solid State Drive (SSD) MZ-V7S500B/AM
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| Series | Samsung 970 EVO PLUS |
|---|---|
| Interface | PCIe Gen 3.0 x4 NVMe 1.3 |
| Weight | 8.00g |
| Power Consumption (Active) | Average: 5.8W, Maximum: 9W (Burst mode) |
| Operating Temperature | 0C ~ +70C |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Application | Desktop |
| Depth | 80.15mm |
| Power Consumption (Idle) | Max. 30 mW |
| Width | 22.15mm |
| Products Status | New |
| Max Sequential Write | Up to 3200 MB/s |
| Brand | SamSung |
| Features | Always Evolving SSD, Design Flexibility, Exceptional Endurance, Level up Performance, Reliability: 300 TBW, Samsung Magician, The new standard in sustainable performance. The 970 EVO Plus provides exceptional endurance powered by the latest V-NAND technology and Samsung's reputation for quality., Unparalleled Reliability |
| 4KB Random Write | QD1: Up to 60 000 IOPS, QD32: Up to 550 000 IOPS |
| Device Type | Internal Solid State Drive (SSD) |
| Max Sequential Read | Up to 3500 MB/s |
| MTBF | 1 500 000 hours |
| Controller | Samsung Phoenix |
| Cache | Samsung 512MB Low Power DDR4 SDRAM |
| Encryption | AES 256-bit Encryption (Class 0), TCG/Opal IEEE1667 (Encrypted drive) |
| Form Factor | M.2 2280 |
| Used For | Consumer |
| Height | 2.38mm |
| Memory Components | V-NAND 3-bit MLC |
| 4KB Random Read | QD1: Up to 19 000 IOPS, QD32: Up to 480 000 IOPS |
| Capacity | 500GB |
| Model | MZ-V7S500B/AM |
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