SAMSUNG 970 EVO PLUS M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND Internal Solid State Drive (SSD) MZ-V7S2T0B/AM

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  • INNOVATIVE V-NAND TECHNOLOGY: Powered by Samsung V-NAND Technology, the 970 EVO Plus SSD’s NVMe interface (PCIe Gen 3.0 x4 NVMe 1.3) offers enhanced bandwidth, low latency, and power efficiency ideal for tech enthusiasts, high end gamers, and 4K & 3D content designers
  • BREAKTHROUGH READ WRITE SPEEDS: Sequential read and write performance levels of up to 3,500 MB/s and 3,300 MB/s, respectively; Random Read (4KB, QD32): Up to 620,000 IOPS Random Read
  • PERFORMANCE OPTIMIZATION AND DATA SECURITY: Seamless cloning and file transfers with Samsung Magician Software, the ideal SSD management solution for performance optimization and data security with automatic firmware updates
  • SUPERIOR HEAT DISSIPATION: Samsung’s Nickel-coated controller and Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops
  • 1200 TBW (Terabytes Written)
Brand

SamSung

Products Status

New

Application

Desktop

Series

Samsung 970 EVO PLUS

Model

MZ-V7S2T0B/AM

Device Type

Internal Solid State Drive (SSD)

Used For

Consumer

Form Factor

M.2 2280

Capacity

2TB

Memory Components

Samsung V-NAND 3-bit MLC

Interface

PCIe Gen 3.0 x4, NVMe 1.3

Controller

Samsung Phoenix Controller

Cache

Samsung 1GB Low Power DDR4 SDRAM

Encryption

AES 256-bit Encryption (Class 0), TCG/Opal IEEE1667 (Encrypted drive)

Max Sequential Read

Up to 3500 MBps

Max Sequential Write

Up to 3300 MBps

4KB Random Read

4KB, QD1: Up to 19,000 IOPS, 4KB, QD32: Up to 620,000 IOPS

4KB Random Write

4KB, QD1: Up to 62,000 IOPS, 4KB, QD32: Up to 560,000 IOPS

MTBF

1,500,000 hours

Features

Reliability: 1200 TBW

Power Consumption (Idle)

Max. 30 mW

Power Consumption (Active)

Average: 6W, Maximum: 9W (Burst mode)

Operating Temperature

0°C ~ +70°C

Max Shock Resistance

1,500G & 0.5 ms (Half sine)

Height

2.38mm

Width

22.15mm

Depth

80.15mm

Weight

8.00g

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