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SAMSUNG 970 EVO M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E2T0E, Bulk

**Compelling Summary:**
**Product:** SAMSUNG 970 EVO M.2 2280 2TB PCIe Gen 3.0 x4 NVMe SSD (MZ-V7E2T0E)
**Key Features:**
– Blazing speeds: Up to 3,500 MB/s read, 2,500 MB/s write via PCIe Gen 3.0 x4 and NVMe 1.3.
– High capacity: 2TB storage in compact M.2 2280 form factor for space-efficient builds.
– Advanced V-NAND 3-bit MLC (TLC) technology ensures durability and sustained performance.
– Samsung’s Phoenix controller and Intelligent TurboWrite buffer optimize speed for large files.
**Benefits:**
– Ideal for gaming, 4K editing, and heavy multitasking with rapid data access and reduced load times.
– Energy-efficient design with thermal control for reliable operation in laptops/desktops.
**Unique Selling Points:**
– Industry-leading endurance (1,200 TBW rating) backed by a 5-year limited warranty.
– Trusted Samsung quality with superior heat dissipation and minimal performance throttling.
– Bulk packaging caters to system builders and upgraders prioritizing value and performance.

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  • M.2 2280
  • 2TB
  • PCIe Gen 3.0 x4, NVMe 1.3
Power Consumption (Active)

Average: 6W / Maximum: 10W (Burst mode)

Memory Components

V-NAND 3-bit MLC

Width

22.15mm

Max Shock Resistance

1 500G & 0.5 ms (Half sine)

Form Factor

M.2 2280

4KB Random Write

QD1: Up to 50 000 IOPS, QD32: Up to 480 000 IOPS

Max Sequential Read

Up to 3500 MB/s

Capacity

2TB

Brand

SamSung

Used For

Consumer

Depth

80.15mm

4KB Random Read

QD1: Up to 15 000 IOPS, QD32: Up to 500 000 IOPS

Model

MZ-V7E2T0E

Series

Samsung 970 EVO

Features

Dynamic Thermal Guard, Non-Volatile Memory Express (NVMe), Professional-Quality Drive Management, Samsung's intelligent TurboWrite technology helps to maximize your computing ability accelerating write speeds above and beyond the already exceptionally fast speeds of NVMe., SSD Data Security, This drive includes an AES-256-bit hardware based full disk encryption engine that secures your data without sacrificing performance and is compliant with TCG/OPAL V2.0 and IEEE1667., TurboWrite Technology, V-NAND Technology

Cache

2GB Low Power DDR4 SDRAM

Interface

PCIe 3.0 x4 NVMe

Power Consumption (Idle)

30 mW (max)

MTBF

1 500 000 hours

Application

Desktop

Device Type

Internal Solid State Drive (SSD)

Products Status

New

Max Sequential Write

Up to 2500 MB/s

Height

2.38mm

Weight

8.00g

Operating Temperature

0C ~ +70C

Controller

Samsung Phoenix

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