| Power Consumption (Active) | 3.2 W |
|---|---|
| Memory Components | Samsung V-NAND 4bit MLC |
| Width | 100.00mm |
| Max Shock Resistance | 1500G |
| Form Factor | 2.5" |
| 4KB Random Write | Up to 88 000 IOPS |
| Max Sequential Read | Up to 560 MB/s |
| Capacity | 4TB |
| Brand | SamSung |
| Used For | Consumer |
| Depth | 69.85mm |
| 4KB Random Read | Up to 98 000 IOPS |
| Model | MZ-77Q4T0BW |
| Series | Samsung 870 QVO |
| Cache | Samsung 4 GB Low Power DDR4 SDRAM |
| Interface | SATA III |
| Power Consumption (Idle) | 35 mW |
| MTBF | 1 500 000 hours |
| Application | Desktop |
| Device Type | Internal Solid State Drive (SSD) |
| Products Status | New |
| Max Sequential Write | Up to 530 MB/s |
| Height | 6.80mm |
| Weight | 54.00g |
| Operating Temperature | 0C ~ +70C |
| Controller | Samsung MKX Controller |
SAMSUNG 870 QVO Series 2.5″ 4TB SATA III Samsung V-NAND 4bit MLC Internal Solid State Drive (SSD) MZ-77Q4T0BW
**SAMSUNG 870 QVO 4TB SSD**
A high-capacity 2.5” SATA III internal SSD offering 4TB storage with Samsung’s V-NAND 4-bit (QLC) technology. speeds speeds up to 560MB/s read and 530MB/s write, ideal for gaming, media storage, and replacing HDDs. Features TurboWrite buffer for sustained performance, AES 256-bit encryption, and low power consumption. Combines Samsung’s reliability with a cost-effective price-per-GB, backed by a 3-year warranty. Perfect for users needing expansive, durable storage without sacrificing speed.
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