Power Consumption (Active) | Read/Write: 2.1W / 3.2W |
---|---|
Memory Components | V-NAND TLC |
Width | 69.85mm |
Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
Form Factor | 2.5" |
4KB Random Write | Up to 30 000 IOPS |
Max Sequential Read | Up to 550 MB/s |
Capacity | 3.84TB |
Brand | SamSung |
Depth | 100.00mm |
Endurance | 1 DWPD |
4KB Random Read | Up to 98 000 IOPS |
Model | MZ-7L33T800 |
Series | Samsung PM893 |
Features | 7 008 TBW |
Cache | Samsung Low Power SDRAM |
Interface | SATA III |
Power Consumption (Idle) | 1.5W |
MTBF | 2 000 000 hours |
Application | Server |
Products Status | New |
Max Sequential Write | Up to 520 MB/s |
Height | 7.00mm |
Weight | 70.00 g |
Operating Temperature | 0C ~ +70C |
Controller | Samsung Metis Controller |
SAMSUNG PM893 2.5″ 3.84TB SATA III V-NAND TLC Enterprise Solid State Drive
**Samsung PM893 2.5″ 3.84TB SATA III SSD**: A high-capacity enterprise-grade drive built for reliability and performance in demanding environments. Features V-NAND TLC technology for enhanced endurance and faster data access, with a SATA III interface for broad compatibility. Delivers consistent throughput, low latency, and robust power-loss protection, ensuring data integrity during unexpected outages. Optimized for mixed workloads (read/write-intensive), it boasts a high terabytes written (TBW) rating and advanced error correction for extended lifespan. Ideal for data centers, servers, and storage systems requiring scalable, energy-efficient storage with enterprise-level durability. Combines Samsung’s proven NAND innovation with enterprise-focused security (AES 256-bit encryption) and thermal control, offering a cost-effective upgrade for legacy SATA infrastructure.
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