SamSung Ram Memory

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  Samsung HBM2E Flashbolt 16Gb (2GB) 3.6Gbps DRAM Chip (KHAA84901B-JC17T00)

  $Quote5 pcs (MOQ) Minimum Order Quantity Inquiry

  **SAMSUNG HBM2E – KHAA84901B-JC17T00**
  A high-bandwidth memory solution designed for advanced computing, featuring **16GB capacity per stack** and **410+ GB/s bandwidth** for ultra-fast data processing. Leverages **TSV (Through-Silicon Via) technology** for compact vertical integration, reducing space while enhancing performance. Operates at **1.2V** for superior power efficiency. Ideal for AI, machine learning, high-performance computing (HPC), and graphics-intensive applications. Combines Samsung’s cutting-edge semiconductor innovation with industry-leading speed, capacity, and energy efficiency, making it a top choice for next-gen data centers and GPUs.

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